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Power MOSFET
N-Channel Enhancement Mode
IXTX24N100
V DSS
I D25
R DS(on)
=
=
≤
1000V
24A
400m Ω
Avalanche Rated
PLUS247
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
1000
1000
V
V
V GSS
Continuous
± 20
V
Tab
V GSM
I D25
I DM
I A
E AS
dV/dt
Transient
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
± 30
24
96
24
3
5
V
A
A
A
J
V/ns
G = Gate
S = Source
Features
D = Drain
Tab = Drain
P D
T J
T JM
T stg
T C = 25 ° C
568
-55 ... +150
150
-55 ... +150
W
° C
° C
° C
?
?
?
?
?
International Standard Package
Low R DS (on) HDMOS TM Process
Rugged Polysilicon Gate Cell Structure
Avalanche Rated
Low Package Inductance
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
Mounting Force
300
260
20..120 / 4.5..27
6
° C
° C
N/lb.
g
Advantages
? PLUS 247 TM Package for Clip or Spring
Mounting
? Space Savings
? High Power Density
Applications
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 3mA
Characteristic Values
Min. Typ. Max.
1000
V
? DC-DC Converters
? Battery Chargers
? Switch-Mode and Resonant-Mode
Power Supplies
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
3.0
5.5 V
± 100 nA
50 μ A
1 mA
400 m Ω
? DC Choppers
? AC Motor Drives
? Temperature and Lighting Controls
? 2010 IXYS CORPORATION, All rights reserved
DS99201C(09/10)
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